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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D427
BLF2048 UHF push-pull power LDMOS transistor
Preliminary specification Supersedes data of 1999 Dec 01 2000 Feb 17
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS * Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range. DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 28 PL (W) 120 (PEP) 140 (PEP) Gp (dB) >10 typ. 11.2 D (%) >30
Top view 1 2
BLF2048
PINNING - SOT539A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION
5 3 4
MBK880
Fig.1 Simplified outline.
dim (dBc) -26 typ. -25
typ. 31
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PARAMETER - - - -65 - MIN. 65 15 18 +150 200 MAX. V V A C C UNIT
2000 Feb 17
2
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under nominal 2-tone RF operating conditions. CHARACTERISTICS Tj = 25 C; per section unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Crs Note 1. Capacitance of die only. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 10 V; ID = 140 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 5 A VGS = VGSth + 9 V; ID = 5 A VGS = 0; VDS = 26 V; f = 1 MHz; note 1 MIN. 65 1.5 - 18 - - - - TYP. - - - - - 4 0.17 3.4 PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS PL = 120 W; Tmb = 50 C, note 1
BLF2048
VALUE 0.35 0.15
UNIT K/W K/W
MAX. - 3.5 10 - 250 - - -
UNIT V V A A nA S pF
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth j-h = 0.5 K/W; unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 28 Ruggedness in class-AB operation The BLF2048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz, PL = 120 W (CW). IDQ (mA) 2 x 400 2 x 400 PL (W) 120 (PEP) 140 (PEP) Gp (dB) >10 typ. 11.2 D (%) >30 typ. 31 dim (dBc) -26 typ. -25
2000 Feb 17
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Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2048
handbook, halfpage
20
MGT007
50
Gp
D
handbook, halfpage
20
MGT008
50
Gp
(dB) 16
VDS = 26 V 28 V
(%) 40
(dB) 16 Gp VDS = 26 V 28 V
D (%)
40
12
Gp 28 V
30
12 28 V 26 V
30
D
8
26 V
20
8
20
4
10
4
D
10
0 0 40 80 120
0 160 200 PL (PEP) (W)
0 0 40 80 120
0 160 200 PL (PEP) (W)
f1 = 2000 MHz; f2 = 2000.1 MHz; IDQ = 2 x 400 mA; Th 25 C.
f1 = 2200 MHz; f2 = 2200.1 MHz; IDQ = 2 x 400 mA; Th 25 C.
Fig.2
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.3
Power gain and drain efficiency as functions of peak envelope load power; typical values.
handbook, halfpage
-10
MGT009
dim (dBc)
handbook, halfpage
-10
MGT010
VDS = 26 V 28 V
dim (dBc)
-20
-20
VDS = 26 V 28 V
-30
d3 28 V
-30 d3 -40 d5 26 V 28 V
-40 d5
-50
26 V
-50
-60
0
40
80
120
160 200 PL (PEP) (W)
-60
0
40
80
120
160 200 PL (PEP) (W)
f1 = 2000 MHz; f2 = 2000.1 MHz; IDQ = 2 x 400 mA; Th 25 C.
f1 = 2200 MHz; f2 = 2200.1 MHz; IDQ = 2 x 400 mA; Th 25 C.
Fig.4
Intermodulation distortion as a function of peak envelope load power; typical values.
Fig.5
Intermodulation distortion as a function of peak envelope load power; typical values.
2000 Feb 17
4
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2048
handbook, halfpage
8
MGT011
handbook, halfpage
8
MGT012
Zi () 4 ri
ZL () 4 RL
xi 0
0
-4
XL
-4 1.6
1.8
2
2.2
2.4
2.6 f (GHz)
-8 1.6
1.8
2
2.2
2.4
2.6 f (GHz)
VDS = 26 V; IDQ = 2 x 400 mA; PL = 160 W (total device); Th 25 C.
VDS = 26 V; IDQ = 2 x 400 mA; PL = 160 W (total device); Th 25 C.
Fig.6
Input impedance per section as a function of frequency (series components); typical values.
Fig.7
Load impedance per section as a function of frequency (series components); typical values.
2000 Feb 17
5
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2048
VBIAS handbook, full pagewidth R1 P1 C9 C8 R2 L10 L8 L2 input 50 L6 C1 L1 B1 B2 C2 L3 C3 L5 L7 L9 L11 P2 C13 C12 R3 VBIAS R4 C11 C10 L13 L15 C25 L25 C26 C27 C28 R6 L26 C29 C30 VDS L17 L21 C4 C5 C14 C15 L19 C16 B4 C18 L4 L16 L18 C17 B3 L22 output 50 C7 C6 L12 L23 C19 L14 C20 C21 C22 L24 R5 C23 C24 VDS
L20
MGT013
Fig.8 2.2 GHz class-AB test circuit.
List of components (see Figs 8 and 9) COMPONENT C1, C2 C3, C5 C4 C6, C10 C7, C11 C8, C12, C23, C29 C9, C13, C24, C30 C14 C15 C16 C17, C18 C19, C25 C20, C26 C21, C27 DESCRIPTION multilayer ceramic chip capacitor; note 1 Tekelec variable capacitor Tekelec variable capacitor + multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 tantalum SMD capacitor tantalum SMD capacitor multilayer ceramic chip capacitor; note 3 multilayer ceramic chip capacitor; note 3 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 MKT ceramic chip capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor VALUE 5.1 pF 0.6 to 4.5 pF 0.6 to 4.5 pF + 2.4 pF 100 pF 18 pF 4.7 F; 35 V 10 F; 35 V 0.5 pF 1 pF 1.5 pF 10 pF 33 nF 6.2 pF 100 nF 2222 581 16641 2222 370 11333 DIMENSIONS CATALOGUE NO.
2000 Feb 17
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Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2048
COMPONENT C22, C28 L1 L2, L3, L20, L21 L4, L5 L6, L7 L8, L9 L10, L11 L12, L13 L14, L15 L16, L17 L18, L19 L22 L23, L25 L24, L26 B1, B4 B2, B3 R1, R3, R5, R6 R2, R4 P1, P2 Notes
DESCRIPTION multilayer ceramic chip capacitor; note 1 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 1 turn enamelled 0.7 mm copper wire balun of semi-rigid cable semi-rigid cable; note 5 metal film resistor metal film resistor variable resistor (multiturn)
VALUE 8.2 pF 47
DIMENSIONS 4.5 x 1 mm 15 x 2 mm 5.6 x 2.6 mm 2.6 x 5.8 mm 11.5 x 12 mm 2.2 x 16 mm
CATALOGUE NO.
57
1/4 at 2.2 GHz 10.4 x 13.7 mm 6.6 x 5.5 mm 7 x 2.6 mm
47 47
4 x 1 mm 1/4 at 2.2 GHz int.dia. 7 mm; length: tbf
50 50 5.6 , 0.6 W 10 , 0.6 W 5 k
1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. 4. Semi-rigid cable soldered along the stub to establish balance. 5. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 6.15); thickness 0.64 mm.
2000 Feb 17
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Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2048
handbook, full pagewidth
40
40
60
P1 C8 C9 R2
R1
VBIAS R5 C20 C6 C7 L12 L8 L10 L14 C19 L23 C21 L24
VDS
C22 C23 C24
BLF2048
B1,L2 C1 L1 L4
L6 L6
L16
C14 C14
B3,L20 L18 C17 C16 C15 L19 C18 B4,L21 L22
C2 C3 L5 C4 B2,L3 L7
C5
PHILIPS
L17 C25
L9 C13 C12 P2 R3 VBIAS C11 C10 L13
L15 L25 C27 L11 C26 R6 C28 L26 VDS
MGT014
R4
C29 C30
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 6.15), thickness 0.64 mm. The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 2.2 GHz class-AB test circuit.
2000 Feb 17
8
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
BLF2048
SOT539A
Package under development
Philips Semiconductors reserves the right to make changes without notice.
D
A F D1
U1 q H1 C
B
w2 M C M
c
1
2
H U2
p
E1 w1 M A M B M
E
5
L A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25
9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96
1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72
41.28 10.29 0.25 41.02 10.03
0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395
OUTLINE VERSION SOT539A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-08 99-12-28
2000 Feb 17
9
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF2048
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Feb 17
10
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
NOTES
BLF2048
2000 Feb 17
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/09/pp12
Date of release: 2000
Feb 17
Document order number:
9397 750 06764

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